| 最大源漏极电压Vds Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
15V |
| 最大漏极电流Id Drain Current |
8A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.2Ω/Ohm @1A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
1-2V |
| 耗散功率Pd Power Dissipation |
3.5W |
| Description & Applications |
N-Channel MOS Silicon FET Very high-speed switching application Low ON resistance Very high-speed switching Low-voltage drive |
| 描述与应用 |
N沟道MOS硅FET 非常高速开关应用 低导通电阻 非常高的速度开关 低电压驱动 |