| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.3Ω/Ohm @1A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | TOSHIBA FIELD EFFECT TRANSISTOR SILICON A CHANNEL MOS TYPE Features Silicon N-Channel MOS FET Low frequency amplifier application High speed switching application Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter |
| 描述与应用 | N沟道增强型 特性 硅N沟道MOS FET 低频放大器中的应用 高速开关应用 低导通电阻 高速开关 4 V栅极驱动器可驱动5 V源 合适的开关稳压器，DC-DC转换 |