| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 32mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 100mW/0.1W |
| Description & Applications | TOSHIBA FIELD EFFECT TRANSISTOR SILICON A CHANNEL MOS TYPE Features Silicon N-Channel Junction FET HIGH FREQUENCY AMPLIFIER APPLICATION AM HIGH FREQUENCY AMPLIFIER APPLICATION AUDIO FREQUENCY AMPLIFIER APPLICATION HIGH Yfs LOW Ciss |
| 描述与应用 | 东芝场效应晶体管的硅A通道MOS型 特性 硅N沟道结型场效应管 高频放大器的应用 AM高频放大器的应用 音频放大器应用 高Yfs 低Ciss |