| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.12Ω/Ohm @3A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.25V |
| 耗散功率Pd Power Dissipation | 20W |
| Description & Applications | Silicon N-Channel MOS FET High speed power switching Features Silicon N-Channel MOS FET High speed power switching application Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Avalanche ratings |
| 描述与应用 | 硅N沟道MOS FET 高速功率开关 特性 硅N沟道MOS FET 高速功率开关应用 低导通电阻 高速开关 低驱动电流 4 V栅极驱动器可驱动从5 V电源 适用于开关稳压器，直流 - 直流转换器 雪崩额定值 |