| 最大源漏极电压Vds Drain-Source Voltage | 100V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20v |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.63Ω/Ohm @500mA 10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2v-2.6V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备应用 •低导通电阻。 •超高速开关。 •4V驱动器 |