| 最大源漏极电压VdsDrain-Source Voltage | 18v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -18v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 5~10ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.4~-4v |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | •Silicon N Channel Junction Type •FM Tuner Applications VHF Band Amplifier Applications • Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) • High forward transfer admitance: |Yfs| = 9 mS (typ.) • Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.) |
| 描述与应用 | •硅N沟道结型 •FM调谐器应用 VHF频带放大器应用 •低噪声系数：NF=2.5分贝“（典型值）（F =100兆赫） •高正向传输admitance：| YFS|=9毫秒（典型值） •极低的反向传输电容：CRSS=0.1 PF（典型值） |