| 最大源漏极电压Vds Drain-Source Voltage | 40V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.25Ω/Ohm @450mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.1-2.1V |
| 耗散功率Pd Power Dissipation | 400mW/0.4W |
| Description & Applications | Silicon N Channel MOS FET Low Frequency Power Switching Features Silicon N Channel MOS FET Low Frequency Power Switching Low on-resistance RDS(on)= 0.25Ω (VGS= 10 V, ID = 450 mA) 4V gate drive devices Small package (MPAK) Expansive drain to source surge power capability |
| 描述与应用 | 硅N沟道MOS FET 低频电源开关 特性 硅N沟道MOS FET 低频电源开关 低导通电阻 RDS（ON）=0.25Ω（VGS= 10 V，ID=450毫安） 4V栅极驱动装置 小型封装（MPAK） 膨胀漏源浪涌功率能力 |