| 最大源漏极电压VdsDrain-Source Voltage | 50v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -50v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 1.2~3ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.4~-5v |
| 耗散功率PdPower Dissipation | 100mW/0.1W |
| Description & Applications | •Field Effect Transistor Silicon N Channel Junction Type •General Purpose and Impedance Converter and Condenser Microphone Applications •High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) |
| 描述与应用 | •场效应晶体管的硅N沟道结型 •通用和阻抗转换器和 电容式麦克风应用 •高击穿电压：VGDS=-50 V •高输入阻抗：IGSS= -1.0 NA（最大值）（VGS=-30 V） •低噪音：NF=0.5分贝（典型值）（RG=100kΩ的，F =120赫兹） |