| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 150mA/0.15A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.9Ω/Ohm @80mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-1.3V |
| 耗散功率Pd Power Dissipation | 250mW/0.25W |
| Description & Applications | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Silicon N-Channel MOS FET Ultrahigh-Speed Switching Applications Low ON resistance Ultrahigh-speed switching 2.5V drive |
| 描述与应用 | N-沟道硅MOSFET 超高速开关应用 特性 硅N沟道MOS FET 超高速开关应用 低导通电阻 超高速开关 2.5V驱动 |