| 最大源漏极电压Vds Drain-Source Voltage | 13.5V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 30mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.5-1/-1-1 |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | Features SILICON N-CHANNEL DUAL GATE MOS FET TV TUNER VHF MIXER APPLICATIONS VHF WIDE BAND RF AMPLIFIER APPLICATIONS Superior cross modulation performance Low reverse transfer capacitance Low noise figure |
| 描述与应用 | 特性 硅N沟道双栅MOS FET 电视调谐器甚高频混频器应用 甚高频宽频带RF放大器应用 高级交叉调制性能 低反向传输电容 低噪声系数 |