| 最大源漏极电压Vds Drain-Source Voltage | 15V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8v |
| 最大漏极电流Id Drain Current | 30mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.5-1/-0-1V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD Silicon N-Channel 4-pin MOS FET For VHF amplification Features Low noise-figure (NF) Large power gain PG lMini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. |
| 描述与应用 | MOS场效应晶体管 FM调谐器和VHF电视调谐器RF放大器 硅N沟道双栅MOS场效应晶体管 4引脚MINI模具 4针硅N沟道MOS场效应管 对于VHF扩增 特点 低噪声系数（NF） 大的功率增益PG lMini型封装，让瘦身套和自动 通过插入磁带/盒包装 |