| 反向电压VrReverse Voltage | 30V |
| 平均整流电流IoAverage Rectified Current | 100mA/0.1A |
| 最大正向压降VFForward Voltage(Vf) | 930mV/0.93V |
| 反向恢复时间TrrReverse Recovery Time | 80ns |
| 最大耗散功率PdPower Dissipation | |
| Description & Applications | FeAtures •Silicon RF Switching Diode •Designed for use in shunt configurAtion in high performAnce RF switches •High shunt signAl isolAtion •Low shunt insertion loss •Optimized for short - open trAnsformAtion using lines |
| 描述与应用 | 特点 •硅射频开关二极管 •设计用于分流配置高性能RF开关 •高并联信号隔离器 •分流插入损耗低 •优化短 - 开放转型线 |