集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-50V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−45V |
集电极连续输出电流ICCollector Current(IC) |
−500mA/-0.5A |
截止频率fTTranstion Frequency(fT) |
80MHz |
直流电流增益hFEDC Current Gain(hFE) |
100~250 |
管压降VCE(sat)Collector-Emitter SaturationVoltage |
−700mV/-0.7V |
耗散功率PcPoWer Dissipation |
200mW/0.2W |
Description & Applications |
PNP general purpose transistor FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification |
描述与应用 |
PNP通用晶体管 特点 •高电流(最大500毫安) •低电压(最大45 V)。 应用 •通用开关和放大 |