| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −45V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 250~600 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −700mV/-0.7V |
| 耗散功率PcPoWer Dissipation | 310mW/0.31W |
| Description & Applications | ·PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. ·Especially suited for automatic insertion in thick- and thin-film circuits. ·These transistors are subdivided into three groups -16,-25 and -40 according to their current gain. ·As complementary types, the NPN transistors BC817 and BC818 are recommended. |
| 描述与应用 | ·PNP硅外延平面晶体管开关，AF驱动器和放大器应用。 ·特别适合自动插入厚薄膜电路。 ·这些晶体管被细分为三组-16，-25和-40，根据其电流增益。 ·互补类型的NPN晶体管BC817和BC818建议。 |