集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流ICCollector Current(IC) | 30mA |
截止频率fTTranstion Frequency(fT) | 5.5GHz |
直流电流增益hFEDC Current Gain(hFE) | 100~200 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率PcPower Dissipation | 120mW/0.12W |
Description & Applications | NPN SILICON EPITAXIAL TRANSISTOR High fT : 5.5 GHz Low Cob : 0.7 pF Super Mini Mold Package |
描述与应用 | NPN硅外延晶体管 高FT:5.5 GHz 低的COB:0.7 pF 超级迷你模具封装 |