| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~450 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 200~600 mV |
| 耗散功率PcPower Dissipation | 310mW/0.31W |
| Description & Applications | NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits. These transistors are subdivided into three groups A, B and C according to their current gain. The type BC846 is available in groups A and B, however, the types BC847 and BC848 can be supplied in all three groups. The BC849 is a low noise type available in groups B and C. As complementary types, the PNP transistors BC856...BC859 are recommended. |
| 描述与应用 | NPN硅外延平面晶体管开关和AF放大器应用。 特别适用于自动插入厚薄膜电路。 这些晶体管被分为三组，A，B和C根据其电流增益。 BC846是不同的，在组A和B，然而，类型BC847和BC848可以提供在所有三个组。 BC849是一款低噪声型，B组和C的互补类型， |