| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −32V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流ICCollector Current(IC) | -1A |
| 截止频率fTTranstion Frequency(fT) | 40MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~250 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 1.35W |
| Description & Applications | PNP medium power transistor FEATURESFEATURES FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • General purpose switching and amplification • Power applications such as audio output stages. |
| 描述与应用 | PNP中等功率晶体管 特点 •高电流（最大1 A） •低电压（最大20 V）。 应用 •通用开关和放大 •电源应用，如音频输出级 |