| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 250mA/0.25A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 25 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 400mW/0.4W |
| Description & Applications | • UHF power transistor FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package |
| 描述与应用 | •UHF功率晶体管 特点 •高效率 •小尺寸离散功率放大器 •900 MHz和1.9 GHz工作 地区 •黄金金属确保 出色的可靠性。 应用 •共发射极AB类 手持对讲机的操作 高达1.9 GHz设备。 说明 NPN硅平面外延晶体管 被封装在塑料，4 - 针 双射SOT343封装 |