| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 250mA/0.25A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.5Ω/Ohm 2.2A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-3.0V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits with applications in relay, high-speed andbline transformer drivers. FEATURES • Direct interface to C-MOS,TTL,etc. • High-speed switching • No secondary breakdown |
| 描述与应用 | N沟道增强模式垂直D-MOS晶体管 说明 N沟道增强型垂直D-MOS晶体管在SOT23封装信封。作为一个设计用于使用 表面贴装器件（SMD）的薄和厚的薄膜电路与继电器，高速andbline变压器驱动器的应用 •直接连接到C-MOS，TTL等 •高速开关 •无二次击穿 |