| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) | 4.5Ghz~6Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 80~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 6 GHz |
| 描述与应用 | NPN硅RF晶体管 •对于低-失真的的的宽带输出放大器中 天线和电信中的阶段 高达在集电极电流从至2 GHz的系统中 70mA到130毫安 •DECT和PCN系统上的的电源放大器，适用于 •集成的的发射极镇流器电阻器 •fT的=6 GHz的 |