| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 18mA |
| 截止频率fTTranstion Frequency(fT) | 9Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | • NPN 9 GHz wideband transistors • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) |
| 描述与应用 | •NPN9 GHz的宽带晶体管 •高功率增益 •低噪声系数 •高转换频率 •黄金金属确保卓越的可靠性。 RF前端应用在GHz范围内，如 模拟和数字蜂窝电话，无绳电话 （CT1，CT2，DECT等），雷达探测器，寻呼机和 卫星电视调谐器（SATV）。 |