| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 4.5V |
| 集电极连续输出电流ICCollector Current(IC) | 12mA |
| 截止频率fTTranstion Frequency(fT) | 25GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 55mW |
| Description & Applications | NPN Silicon RF Transistor For low current applications For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms= 23 dB at 1.8 GHz Transition frequency fT = 25 GHz Gold metallization for high reliability SIEGET 25 GHz fT - Line |
| 描述与应用 | NPN硅RF晶体管 对于低电流应用？ 振荡器高达12 GHz的？ 噪声系数F =1.25 dB，在1.8 GHz的 杰出GMS=23在1.8 GHz 过渡频率fT= 25 GHz的 黄金金属的高可靠性 SIEGET25 GHz的FT - 线路 |