| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 13V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 30mA |
| 截止频率fTTranstion Frequency(fT) | 42Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 160~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 160mW/0.16W |
| Description & Applications | NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.85 dB at 6 GHz • High maximum stable gain Gms= 27.5 dB at 1.8 GHz • Gold metallization for extra high reliability • 150 GHz fT-Silicon Germanium technology |
| 描述与应用 | NPN硅锗射频晶体管 •高增益超低噪声RF晶体管 •高达10 GHz的范围广泛的无线应用提供出色的性能 •非常适于CDMA和WLAN应用 •杰出的噪声指数为1.8GHz（F=0.5dB时） 杰出的噪声指数为6 GHz（F =0.85dB时） •高的最大稳定增益 GMS=27.5dB（1.8 GHz时） •黄金金属额外的高可靠性 •150 GHz的FT-硅锗技术 |