| 最大源漏极电压VdsDrain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | 630mA/0.63A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 445mΩ@ VGS =2.5V, ID =400mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.6~1.5V |
| 耗散功率PdPower Dissipation | 270mW/0.27W |
| Description & Applications | Small Signal MOSFET Features • Small Footprint (2 x 2 mm) • Low Gate Charge N−Channel Device • ESD Protected Gate • Same Package as SC−70 (6 Leads) • Pb−Free Packages are Available Applications • Load Power switching • Li−Ion Battery Supplied Devices • Cell Phones, Media Players, Digital Cameras, PDAs • DC−DC Conversion |
| 描述与应用 | 小信号MOSFET 特点 •小底印（2×2毫米） •低栅极电荷的N沟道器件 •ESD保护门 •同一个包SC-70（6引线） •无铅包可用 应用 •负载电源开关 •锂离子电池提供的设备 •手机，媒体播放器，数码相机，掌上电脑 •DC-DC转换 |