| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 120mA/0.12A |
| 截止频率fTTranstion Frequency(fT) | 9Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 1.2W |
| Description & Applications | NPN wideband dual transistor FEATURES • High gain • High output voltage • Low noise • Gold metallization ensures excellent reliability • Low thermal resistance. APPLICATIONS • VHF, UHF and CATV amplifiers |
| 描述与应用 | 双晶体管NPN宽带 特点 •高增益 •高输出电压 •低噪音 •黄金金属确保卓越的可靠性 •低热阻。 应用 •VHF，UHF和CATV放大器 |