| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 8Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 100 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 300mW/0.3W |
| Description & Applications | NPN 8 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz. |
| 描述与应用 | NPN8 GHz的宽带晶体管 特点 •高功率增益 •低噪声系数 •高转换频率 •黄金金属确保卓越的可靠性 •SOT323信封。 说明 NPN晶体管在一个塑料SOT323信封。它是专为宽带应用，如卫星电视调谐器和射频的便携式通信设备高达2 GHz。 |