| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 30mA |
| 截止频率fTTranstion Frequency(fT) | 5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 280mW/0.28W |
| Description & Applications | NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W (PNP) |
| 描述与应用 | NPN硅RF晶体管 •对于宽带放大器高达2GHz的和快速的非饱和开关集电极电流从0.5 mA至20 mA •互补类型：：BFT92W（PNP） |