集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流ICCollector Current(IC) | 50mA |
截止频率fTTranstion Frequency(fT) | 6Ghz |
直流电流增益hFEDC Current Gain(hFE) | 50~200 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | |
耗散功率PcPower Dissipation | 300mW/0.3W |
Description & Applications | NPN Silicon RF Transistor For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA |
描述与应用 | NPN硅RF晶体管 适合低失真宽带放大器和振荡器高达2 GHz的集电极电流从5 mA到30 mA |