| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 400V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 350V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 70MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FEATURES High VCEO=350V Low saturation voltage COMPLEMENTARY TYPE BSP16 |
| 描述与应用 | SOT223 NPN硅平面高压晶体管 特点 高VCEO=350V 低饱和电压 互补型 BSP16 |