| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 6.7Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 90~180 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 800mW/0.8W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications High gain High cutoff frequency : fT=6.7GHz typ. Small and slim 6-pin package. Large allowable collector dissipation (800mW max) |
| 描述与应用 | NPN平面外延硅晶体管 高频低噪声 放大器的应用 高增益 高截止频率：：FT =6.7GHZ典型。 小巧玲珑的6引脚封装。 允许集电极耗散较大（800mW) |