| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流ICCollector Current(IC) | -1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 2W |
| Description & Applications | DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. |
| 描述与应用 | 产品描述： 中央政府半导体CZT4033型的PNP硅晶体管由外延平面工艺，环氧树脂模压在一个表面贴装封装，为高电流的通用放大器应用设计制造。 |