| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | |
| 集电极连续输出电流IC Collector Current(IC) | |
| 基极输入电阻R1 Input Resistance(R1) | 1KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.1 |
| 直流电流增益hFE DC Current Gain(hFE) | 33 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTA) • Built-In Biasing Resistors, R1≠R2 • “Lead Free”, RoHS Compliant • Halogen and Antimony Free "Green" Device • Qualified to AEC-Q101 Standards for High Reliability |
| 描述与应用 | 特性 •外延平面模具建设 •互补PNP类型可用（DDTA） •内置偏置电阻器R1≠R2 •无铅，符合RoHS标准 •卤素和锑免费的“绿色”设备 •符合AEC-Q101标准.高可靠性 |