| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 0.14~0.24ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.2~-1.2v |
| 耗散功率PdPower Dissipation | 100mW/0.1W |
| Description & Applications | •N-Channel Silicon Junction FET Features • Ultrasmall (1006 size), thin (0.5mm) leadless package. • Especially suited for use in electret condenser microphone for audio equipments and telephones. • Excellent voltage characteristics. • Excellent transient characteristics. • Adoption of FBET process. |
| 描述与应用 | •N沟道硅结型场效应管 特点 •超小（1006尺寸），薄（0.5mm）的无铅封装。 特别适合使用的驻极体电容传声器的音响设备和电话。 •优秀的电压特性。 •出色的瞬态特性。 •通过过程FBET。 |