| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 |
-50V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) Q1/Q2 |
-50V/50V |
| 集电极连续输出电流IC Collector Current(IC) Q1/Q2 |
-0.1A/0.1A |
| Q1基极输入电阻R1 Input Resistance(R1) |
22KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
22KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
22KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
22KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) |
|
| 截止频率fT Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc Power Dissipation |
150mW/0.15W |
| Description & Applications |
Features •Dual Common Base−Collector Bias Resistor Transistors •Both the DTA124E chip and DTC124E chip in a EMT or UMT or SMT package. •Mounting possible with EMT6 or UMT6 or SMT6 automatic mounting machines. •Transistor elements are independent, eliminating interference. •Mounting cost and area can be cut in half. |
| 描述与应用 |
特点 •双共基极 - 集电极偏置电阻晶体管 •无论是DTA124E芯片和DTC124E芯片在EMT或UMT或SMT封装。 •安装与EMT6或UMT6或SMT6的自动安装机器。 •晶体管元素是独立的，消除干扰。 •安装成本和面积可减少一半 |