| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 |
−50V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) Q1/Q2 |
-50V/50V |
| 集电极连续输出电流IC Collector Current(IC) Q1/Q2 |
-100mA/100mA |
| Q1基极输入电阻R1 Input Resistance(R1) |
10KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
0.21 |
| Q2基极输入电阻R1 Input Resistance(R1) |
10KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
0.21 |
| 直流电流增益hFE DC Current Gain(hFE) |
|
| 截止频率fT Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc Power Dissipation |
150mW/0.15W |
| Description & Applications |
Features •DTA114Y and DTC114Y transistors are built-in a EMT or UMT or SMT package •(Dual Digital Transistors for Inverter Drive) |
| 描述与应用 |
特点 •DTA114Y和DTC114Y晶体管内置在EMT或UMT或SMT封装 •（逆变器驱动的双数字晶体管） |