| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 350V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 350V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 40Mhz~200Mhz |
| 直流电流增益hFEDC Current Gain(hFE) | 15~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV~500mV |
| 耗散功率PcPower Dissipation | 225mW/0.225W |
| Description & Applications | High Voltage Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. |
| 描述与应用 | 高电压晶体管NPN硅 产品符合RoHS要求的材料。 |