| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -30V/60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -25V/50V |
| 集电极连续输出电流IC Collector Current(IC) | -150mA/100mA |
| 截止频率fT Transtion Frequency(fT) | 210MHz/200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 800/1500 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | -150mV/100mV |
| 耗散功率Pc Power Dissipation | 300mW |
| Description & Applications | Features • PNP/NPN Epitaxial Planar Silicon Composite Transistor • Low-Frequency General-Purpose Amp, Driver Applications • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC150 is formed with two chips, being equivalent to the 2SA1813/2SC4413, placed in one package. • Adoption of FBET process. • High DC current gain. • Hgih VEBO. |
| 描述与应用 | 特点 •PNP/ NPN平面外延硅复合晶体管 •低频通用放大器，驱动器应用 •复合型中包含2个晶体管CP包装目前在使用，大大提高了安装效率。 •FC150两个芯片组成，相当于2SA1813/2SC4413，放置在一个包装。 •通过过程FBET。 •高直流电流增益。 •Hgih VEBO。 |