| 反向电压VrReverse Voltage | 50V |
| 平均整流电流IoAverage Rectified Current | 100mA/0.1A |
| 最大正向压降VFForward Voltage(Vf) | 1.2V |
| 反向恢复时间TrrReverse Recovery Time | 5ns |
| 最大耗散功率PdPower Dissipation | |
| Description & Applications | FeAtures • Silicon EpitAxiAl PlAnAr Diode • Composite Diode for High-Speed Switching ApplicAtions • Composite type with 4 diodes cintAined in the CP pAckAge currently in use, resulting in the greAtly improVed circuit boArd using efficiency. • The FC802 is formed with two chips, eAch being equiVAlent to the DCB015, plAced in one pAckAge. • FAst switching speed. |
| 描述与应用 | 特点 •硅外延平面二极管 •复合二极管，高速开关应用 •复合型包含在CP包装目前正在使用，从而利用效率大大提高了的电路板有4个二极管。 •FC802两个芯片组成，每个相当于DCB015，放置在一个包装。 •快速开关速度。 |