| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 300~900 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 V(BR)CEO > 40V High current capability IC = 1A Low saturation voltage VCE(sat) < 500mV Complementary PNP type: FCX591A “Lead Free”, RoHS Compliant Power MOSFET gate driving Low loss power switching |
| 描述与应用 | 40V NPN硅平面中功率晶体管SOT89 V（BR）CEO>40V 高电流能力IC=1A 低饱和电压VCE（sat）<500mV的 互补PNP类型：FCX591A “对无铅，符合RoHS标准 功率MOSFET的栅极驱动 低损耗电源开关 |