| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 120MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 150~450 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | SOT89 NPN SILICON POWER(SWITCHING) TRANSISTOR 2W POWER DISSIPATION 12A Peak Pulse Current Excellent HFE Characteristics up to 12 Amps Extremely Low Saturation Voltage E.g. 8mv Typ Extremely Low Equivalent On-resistance |
| 描述与应用 | SOT89 NPN硅功率（开关）晶体管 功耗为2W 12A峰值脉冲电流 优秀的HFE特性至12安培 极低的饱和电压，例如8MV典型 极低的等效导通电阻 |