| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 2.75A |
| 截止频率fTTranstion Frequency(fT) | 165MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 320mV/0.32V |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | SOT89 NPN SILICON POWER(SWITCHING) TRANSISTOR 2W POWER DISSIPATION 6A PEAK PULSE CURRENT EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ EXTREMELY LOW EQUIVALENT ON-RESISTANCE |
| 描述与应用 | SOT89 NPN硅功率（开关）晶体管 功耗为2W 6A峰值脉冲电流 优秀HFE特性6安培的 极低的饱和电压，例如典型13MV 极低的等效导通电阻 |