| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 900mA/0.9A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.22Ω/Ohm 900mA,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6-1.5V |
| 耗散功率Pd Power Dissipation | 350mW/0.35W |
| Description & Applications | 20V N-Channel PowerTrench MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) |
| 描述与应用 | 20V N-沟道PowerTrench MOSFET 概述 此20V N沟道MOSFET采用飞兆半导体的高 电压的PowerTrench过程。它已被优化为 电源管理应用。 •低栅极电荷 •开关速度快 •高性能沟道技术极低B 的RDS（ON） |