| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 2.5A |
| 截止频率fTTranstion Frequency(fT) | 140MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 450 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 130mV/0.13V |
| 耗散功率PcPower Dissipation | 625mW/0.625W |
| Description & Applications | SOT23 NPN SILICON POWER(SWITCHING) TRANSISTORS 625mW POWER DISSIPATION 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage Extremely Low Equivalent On Resistance |
| 描述与应用 | SOT23 NPN硅功率（开关）晶体管 功耗625mW 12A峰值脉冲电流 优秀HFE特性12A（脉冲） 极低的饱和电压 极低的等效导通电阻 |