| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -180V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -140V |
| 集电极连续输出电流ICCollector Current(IC) | -4A |
| 截止频率fTTranstion Frequency(fT) | 110MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -370mV/-0.37V |
| 耗散功率PcPoWer Dissipation | 3W |
| Description & Applications | PNP SILICON PLANAR HIGH CURRENT TRANSISTORS FEATURES 4 Amps continuous current , up to 15 Amps peak current Very low saturation voltages Excellent gain characteristics specified up to 10 Amps COMPLEMENTARY TYPES FZT855 |
| 描述与应用 | PNP硅平面高电流晶体管 特点 4安培连续电流高达15安培的峰值电流 极低的饱和电压 出色的增益特性可达10安培 互补类型FZT855 |