| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 4.5V |
| 集电极连续输出电流ICCollector Current(IC) | 36mA |
| 截止频率fTTranstion Frequency(fT) | 1.8GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 2V |
| 耗散功率PcPower Dissipation | 162mW/0.162W |
| Description & Applications | High Performance Isolated Collector Silicon Bipolar Transistor Ideal for High Gain, Low Noise Applications Can be Used Without Impedance Matching Applications LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and Down Converter for Cellular and PCS Handsets and Cordless Telephones Oscillator for TV Delivery and TVRO Systems up to 10 GHz |
| 描述与应用 | 高性能隔离 硅双极晶体管集电极 非常适于高增益，低噪声应用 可以不使用阻抗匹配应用 低噪声放大器（LNA），振荡器，驱动器放大器，缓冲放大器和下变频器 蜂窝和PCS手机和无绳电话 电视交付高达10 GHz的TVRO系统振荡器 |