| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 900MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40~120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 600mV/0.6V |
| 耗散功率PcPower Dissipation | 225mW/0.225W |
| Description & Applications | NPN EPITAXIAL PLANAR TRANSISTOR The HMBT2369 is designed for general purpose switching and amplifier applications. Low Collector Saturation Voltage High speed switching Transistor |
| 描述与应用 | NPN外延平面晶体管 专为通用开关和放大器应用。 低集电极饱和度电压 高速开关晶体管 |