| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 0.15~0.35ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.6~-1.5v |
| 耗散功率PdPower Dissipation | 100mW/0.1W |
| Description & Applications | •Silicon N-Channel Junction FET •Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic |
| 描述与应用 | •硅N沟道结型场效应管的FM调谐器 •特别适合用于音频，电话电容话筒 •优秀的电压特性 •出色的瞬态特性 |