| 三极管BJT类型 TYPE | NPN |
| 三极管BJT集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 15V |
| 三极管BJT集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
| 三极管BJT集电极连续输出电流IC Collector Current(IC) | 1.5A |
| 三极管BJT截止频率fT Transtion Frequency(fT) | 450MHz |
| 三极管BJT直流电流增益hFE DC Current Gain(hFE) | 100mA |
| 三极管BJT管压降VCE（sat） Collector-Emitter Saturation Voltage | 130~200mV |
| 二极管DIODE类型 TYPE | 肖特基-单管 SBD-Single |
| 二极管DIODE反向电压VR Reverse Voltage | 30V |
| 二极管DIODE正向整流电流Io Rectified Current | 700mA |
| 二极管DIODE正向电压降VF Forward Voltage(Vf) | 500mV |
| 耗散功率Pc Power Dissipation | 700mW |
| Description & Applications | Features • TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode • DC/DC Converter Applications • Composite type with an NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. • The MCH5702 consists of two chips which are equivalent to the MCH6201 and the SBS006, respectively. • Ultrasmall package (0.85mm high when mounted) facilitates miniaturization in end products. |
| 描述与应用 | 特点 •TR：NPN平面外延硅晶体管 SBD：肖特基二极管 •DC / DC转换器应用 •复合型NPN晶体管和肖特基势垒二极管中包含一个包装促进高密度安装。 •的MCH5702由两个芯片，以的MCH6201及SBS006是等价的，分别。 •超小封装（0.85毫米高，安装时）有利于在终端产品的小型化。 |