| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −45V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 210~340 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP silicon general purpose amplifier Transistor Feature Pb−Free Package is Available |
| 描述与应用 | PNP硅通用晶体管放大器 特点 无铅包装是可用 |