| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -300V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −300V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 50MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~200 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 150mW/0.15W |
| Description & Applications | PNP silicon general purpose amplifier Transistor PNP Silicon General Purpose High Voltage Transistor This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant |
| 描述与应用 | PNP硅通用晶体管放大器 PNP硅通用高电压晶体管 这PNP硅平面晶体管是专为通用放大器应用。 特点 这些器件是无铅，无卤/ 无BFR，并符合RoHS标准 |